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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p303 Nitrogen-Doping Efficiency in ZnSe and ZnTe   [ 234 K ]
  Authors: Byoung Ho Cheong, K.J. Chang
• p309 Doping of ZnSe, ZnTe, and CdTe with Group V Elements   [ 265 K ]
  Authors: Herbert Wolf, A. Burchard, Manfred Deicher, T. Filz, A. Jost, St. Lauer, R. Magerle, V. Ostheimer, Wulf Pfeiffer, Th. Wichert
• p315 Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe   [ 333 K ]
  Authors: S.G. Jahn, Ulrich Wahl, M. Restle, H. Quintel, H. Hofsäss, M. Wienecke, I. Trojahn
• p321 Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li   [ 321 K ]
  Authors: Herbert Wolf, A. Jost, R. Lermen, T. Filz, V. Ostheimer, Th. Wichert
• p327 The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound Semiconductors   [ 252 K ]
  Authors: M. Illgner, Harald Overhof
• p333 Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation   [ 293 K ]
  Authors: Werner Puff, S. Brunner, Peter Mascher, Adam G. Balogh
• p339 Photoluminescence of Bulk Si-Ge Single Crystals   [ 222 K ]
  Authors: T. Honda, Masashi Suezawa, Koji Sumino
• p345 Dopant Diffusion in Strained and Relaxed Si_1-xGe_x   [ 191 K ]
  Authors: A.D.N. Paine, Masami Morooka, Arthur F.W. Willoughby, Janet M. Bonar, P. Phillips, M.G. Dowsett, G. Cooke
• p349 In Situ Phosphorus Doping of Si and Si_1-xGe_x Epitaxial Layers by RTP/VLP-CVD   [ 116 K ]
  Authors: Xiao Dong Huang, Ping Han, Yi Shi, You Dou Zheng, Li Qun Hu, Rong Hua Wang, Shun Ming Zhu
• p353 Electrical Transport in Si_xGe_1-x Bulk Alloys   [ 265 K ]
  Authors: Teimuraz Mchedlidze, I. Yonenaga, A. Matsui, Koji Sumino