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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p359 Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si_1-x Ge_x Crystals   [ 199 K ]
  Authors: M. Höhne, U. Juda, Jürgen Wollweber, D. Schulz, J. Donecker, A. Gerhardt
• p365 Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films   [ 298 K ]
  Authors: Yutaka Mera, Koji Maeda, Yasuhiro Shiraki
• p371 Irradiation Induced Lattice Defects in Si_1-xGe_x Epitaxial Devices   [ 271 K ]
  Authors: H. Ohyama, Jan Vanhellemont, Y. Takami, K. Hayama, T. Kudo, T. Hakata, K. Kobayashi, H. Sunaga, J. Poortmans, M. Caymax
• p377 Photoluminescence of Deformed Si-Ge Alloy   [ 208 K ]
  Authors: Kazuhiro Tanaka, Akira Matui, Masashi Suezawa, Koji Sumino
• p383 Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers   [ 321 K ]
  Authors: Martin Kittler, C. Ulhaq-Bouillet, V. Higgs
• p389 An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron Disilicide   [ 308 K ]
  Authors: K. Irmscher, W. Gehlhoff, Y. Tomm, H. Lange
• p395 DX Centres Versus Shallow D-Centres in AIGaAs Based Quantum Wells   [ 413 K ]
  Authors: S. Huant, A. Mandray, G. Martinez
• p403 Extrinsic Self-Trapping of an Electron in Quantum-Well Structures   [ 259 K ]
  Authors: Yuzo Shinozuka
• p409 Carbon Delta-Doping In GaAs and AlAs   [ 292 K ]
  Authors: L. Hart, B.R. Davidson, J.M. Fernández, R.C. Newman, C.C. Button
• p415 Theory of Si δ-Doped GaAs   [ 282 K ]
  Authors: R. Jones, Sven Öberg