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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p421 Metastability and Electronic Structure of Periodically n-Type and p-Type δ-Doped Layer in GaAs   [ 160 K ]
  Authors: A. Fazzio, T.M. Schmidt
• p425 Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces   [ 280 K ]
  Authors: R.C. Newman, M.J. Ashwin, M.R. Fahy, L. Hart, S.N. Holmes, C. Roberts, J. Wagner
• p431 Saturation of Luminescence Quenching Due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well   [ 244 K ]
  Authors: N. Kamata, E. Kanoh, K. Hoshino, K. Yamada, M. Nishioka, Y. Arakawa
• p437 Defect Induced Electron Transport Trough Semiconductor Barriers   [ 207 K ]
  Authors: J.C. Bourgoin, Lassad El Mir
• p443 Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times   [ 288 K ]
  Authors: T. Suski, P. Wiśniewski, Czeslaw Skierbiszewski, E. Litwin-Staszewska, G. Brunthaler, K. Köhler
• p449 Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells   [ 271 K ]
  Authors: J.Peder Bergman, P.O. Holtz, Bo Monemar, L. Lindström, M. Sundaram, A.C. Gossard, J.L. Merz
• p455 Defect Related Recombination Processes in II-VI Quantum Wells   [ 307 K ]
  Authors: M. Godlewski, J.Peder Bergman, Bo Monemar, B. Koziarska, A. Suchocki, G. Karczewski, T. Wojtowicz, Jacek Kossut, A. Waag, D. Hommel
• p461 Magnetoelectronic States in Semiconductor / Antiferromagnet Superlattices   [ 343 K ]
  Authors: Zbysław Wilamowski, W. Jantsch, G. Springholz, W. Faschinger
• p467 Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells   [ 331 K ]
  Authors: W. Gehlhoff, N.T. Bagraev, L.E. Klyachkin
• p473 Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures   [ 318 K ]
  Authors: W.M. Chen, I.A. Buyanova, Anne Henry, W.X. Ni, G.V. Hansson, Bo Monemar