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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p479 Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers   [ 291 K ]
  Authors: I.A. Buyanova, W.M. Chen, Anne Henry, W.X. Ni, G.V. Hansson, Bo Monemar
• p485 Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy   [ 212 K ]
  Authors: Rong Zhang, Kai Yang, Guoyi Qing, Yi Shi, Shu Lin Gu, Rong Hua Wang, Li Qun Hu, Weizhong Gao, You Dou Zheng
• p491 Multiphonon Carrier Emission and Capture by Defects in Nanostructures   [ 215 K ]
  Authors: I.N. Yassievich, A.A. Pakhomov
• p497 Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations   [ 397 K ]
  Authors: Jaroslaw Dąbrowski, H.J. Müssig, G. Wolff, Waleran Arabczyk, S. Hinrich
• p503 Enhanced Impurity Solubility and Diffusion Near Surfaces   [ 32 K ]
  Authors: J. Tersoff
• p505 A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy   [ 356 K ]
  Authors: T. Walther, Colin J. Humphreys, A.G. Cullis, D.J. Robbins
• p511 Si/Ge Ordered Interface: Structure and Formation Mechanism   [ 383 K ]
  Authors: N. Ikarashi, Katsuhiro Akimoto, Atsushi Oshiyama, Tetsuo Tatsumi
• p517 Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous Silicon   [ 248 K ]
  Authors: R. Laiho, L.S. Vlasenko, M.P. Vlasenko
• p523 Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging   [ 250 K ]
  Authors: A.M. Kreshchuk, G.D. Kipshidze, S.V. Novikov, I.G. Savel'ev, A.Ya. Shik
• p529 Stucture of the P_b Center: Endor Investigation   [ 304 K ]
  Authors: V.Ya. Bratus, S.S. Ishchenko, S.M. Okulov, I.P. Vorona, Hans Jürgen von Bardeleben