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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p535 High Quality GaAs on Si Grown by CBE   [ 179 K ]
  Authors: H. Uchida, M. Adachi, Takashi Egawa, Hironobu Nishikawa, Takashi Jimbo, Masayoshi Umeno
• p539 Control of Defects in GaAs/GaInP Interface Grown by MOVPE   [ 245 K ]
  Authors: Takayuki Arai, Kazuo Uchida, Hiroki Tokunaga, Koh Matsumoto
• p543 Ab Initio Study of Cl Impurity at GaAs Surfaces   [ 333 K ]
  Authors: Takahisa Ohno, Taizo Sasaki
• p549 Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim   [ 295 K ]
  Authors: J.-L. Farvacque, Z. Bougrioua, D. Ferré
• p555 High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface   [ 320 K ]
  Authors: Masanori Shinohara, Haruki Yokoyama, Naohisa Inoue
• p561 Strain Characterization of Hg_1-xFe_xSe-Layers by Electron Spin Resonance   [ 310 K ]
  Authors: G. Hendorfer, W. Jantsch, W. Helzel, J.H. Li, Zbysław Wilamowski, T. Widmer, D. Schikora, K. Lischka
• p567 Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices   [ 198 K ]
  Authors: C. Boemare, Maria Helena Nazaré, W. Taudt, J. Söllner, M. Heuken
• p573 Photoinduced Defects in CdS-Doped Glasses   [ 218 K ]
  Authors: Tadaki Miyoshi, Ken-Ichi Towata, Hirobumi Matsuki, Naoto Matsuo, Teruhisa Kaneda
• p579 Electronic Structure of Erbium Centers in Silicon   [ 296 K ]
  Authors: F.X. Gan, Lucy V.C. Assali, Lionel C. Kimerling
• p585 Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits   [ 287 K ]
  Authors: Jürgen Michel, J. Palm, F.X. Gan, F.Y.G. Ren, B. Zheng, S.T. Dunham, Lionel C. Kimerling