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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Ga Bound Excitons in 6H-SiC

Ga Bound Excitons in 6H-SiC

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Abstract:

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

91-96

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.91

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Online since:

November 1995

Authors:

Anne Henry, Christer Hallin, Ivan G. Ivanov, Peder Bergman, Olof Kordina, Bo Monemar, Erik Janzén

Keywords:

Bound-Exciton, Gallium, Photoluminescence (PL), Silicon Carbide (SiC)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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