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Materials Science Applications of Ion Beam Techniques

Materials Science Forum Volumes 248 - 249

• Papers
• Abstracts

• p229 Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry   [ 192 K ]
  Authors: T. Lohner, N.Q. Khánh, P. Petrik, M. Fried, E. Kótai, J. Gyulai
• p233 Plasma Immersion Ion Implantation of Nitrogen into Porous Silicon Layers   [ 247 K ]
  Authors: A. Manuaba, I. Pintér, E. Szilágyi, Gábor Battistig, C. Ortega, A. Grosman, G. Amsel
• p237 Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis   [ 326 K ]
  Authors: K. Volz, J.K.N. Lindner, B. Stritzker
• p241 Lattice Damage of Relaxed Si_1-xGe_x Alloys of Various Composition Implanted with 2 MeV Si Ions   [ 239 K ]
  Authors: J.K.N. Lindner
• p245 Auger Depth Profiling with Good Depth Resolution of Low Energy Implantation Induced Ion Mixing   [ 221 K ]
  Authors: A. Sulyok, A. Galisova, M. Menyhard
• p249 Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures   [ 256 K ]
  Authors: Prakash N.K. Deenapanray, F.D. Auret, G. Myburg, M. Hayes, W.E. Meyer, C. Schutte
• p253 Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen   [ 229 K ]
  Authors: T. Hauser, L. Bredell, H. Gaigher, H. Alberts, A. Botha, M. Hayes, E. Friedland
• p257 Dose Rate and Temperature Dependence of the Crystallization Rate during IBIEC in InAs   [ 194 K ]
  Authors: Robert Schulz, T. Fehlhaber, E. Glaser, F. Schrempel
• p261 Damage Production in Ion Implanted III-V Compounds: A Comparative Study   [ 292 K ]
  Authors: Elke Wendler
• p267 The Behaviour of ¹²B in CdTe Studied with β-NMR Techniques   [ 252 K ]
  Authors: E. Oldekop, V. Eyert, F. Niedermeyer, M. Wienecke, W.-D. Zeitz