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Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

• Papers
• Abstracts

• p71 Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge   [ 209 K ]
  Authors: I.V. Altukhov, E.G. Chirkova, M.S. Kagan, K.A. Korolev, V.P. Sinis, K. Schmalz, M.A. Odnoblyudov, I.N. Yassievich
• p77 Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As   [ 295 K ]
  Authors: K.M. Itoh, Takahiro Kinoshita, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, J. Muto, J.W. Farmer, V.I. Ozhogin
• p83 Defects in SiGe   [ 416 K ]
  Authors: Arne Nylandsted-Larsen
• p91 Acceptor States in Boron Doped SiGe Quantum Wells   [ 242 K ]
  Authors: K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, Dmitry Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich
• p97 Substitutional Carbon in Ge and Si_1-xGe_x.   [ 344 K ]
  Authors: L. Hoffmann, J.C. Bach, J. Lundsgaard Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen, P. Leary, R. Jones, Sven Öberg
• p103 Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge   [ 310 K ]
  Authors: D. Wauters, Paul Clauws
• p109 Optical Investigation of Ge-Rich Ge_1-xSi_x (0≤ x ≤ 0.1) Alloys   [ 333 K ]
  Authors: M. Franz, Klaus Pressel, K.F. Dombrowski, H. Rücker, A. Barz, P. Dold, K.W. Benz
• p115 Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x   [ 333 K ]
  Authors: M. Mamor, F.D. Auret, S.A. Goodman, G. Myburg, Prakash N.K. Deenapanray, W.E. Meyer
• p121 Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays   [ 263 K ]
  Authors: H. Ohyama, Jan Vanhellemont, Eddy Simoen, C. Claeys, Y. Takami, K. Hayama, H. Sunaga, J. Poortmans, M. Caymax
• p127 Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys   [ 323 K ]
  Authors: Atsuo Kawasuso, Sohei Okada, I. Yonenaga, T. Honda, Masashi Suezawa