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Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

• Papers
• Abstracts

• p623 Raman Scattering Measurements in Neutron-Irradiated Silicon   [ 241 K ]
  Authors: Michèle Coeck, Christiane Laermans, R. Provoost, R.E. Silverans
• p629 Recombination Centers in Electron Irradiated Si and GaAs   [ 223 K ]
  Authors: J.C. Bourgoin, M. Zazoui, M.A. Zaidi
• p635 Study of a Li- and C-Related Center Formed at High Annealing Temperatures in Neutron-Irradiated FZ Silicon Doped with Li   [ 340 K ]
  Authors: F. Rodriguez, Gordon Davies, Edward C. Lightowlers
• p641 The Influence of Accumulated Defects on the Lateral Spread of Implanted Ions   [ 388 K ]
  Authors: S.T. Nakagawa
• p647 Structural Change and Relaxation Processes of Tetrahedral Point Defects   [ 298 K ]
  Authors: El-Maghraby Mohamed, Yuzo Shinozuka
• p653 The Jahn-Teller Effect and the Structure of Monovacancies in Si, SiC and C   [ 405 K ]
  Authors: A. Zywietz, J. Furthmüller, Friedhelm Bechstedt
• p659 Transient Lattice Vibration Induced by Successive Carrier Captures at a Deep-Level Defect and the Effect on Defect Reactions   [ 269 K ]
  Authors: Yuzo Shinozuka, Tetsuya Karatsu
• p665 Characterisation of Recombination Centres in Solar Cells by DLTS   [ 243 K ]
  Authors: Tomas Markvart
• p671 Defect-Engineering Rad-Hard Detectors for the CERN LHC   [ 375 K ]
  Authors: B.C. MacEvoy, K. Gill, G. Hall
• p677 Theory of 3d Transition Metal Defects in 3C-SiC   [ 521 K ]
  Authors: Harald Overhof