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Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

• Papers
• Abstracts

• p133 Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching   [ 359 K ]
  Authors: S.A. Goodman, F.D. Auret, M. Mamor, Prakash N.K. Deenapanray, W.E. Meyer
• p139 The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy   [ 352 K ]
  Authors: I.A. Buyanova, W.M. Chen, G.R. Pozina, Bo Monemar, W.X. Ni, G.V. Hansson
• p145 Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect   [ 379 K ]
  Authors: A. Mesli, P. Kringhøj, Arne Nylandsted Larsen
• p151 Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature   [ 504 K ]
  Authors: P.M. Mooney, Kai Shum
• p159 Dislocation Activities in Bulk GeSi Crystals   [ 370 K ]
  Authors: I. Yonenaga, Koji Sumino
• p165 Schottky Diodes on Si_1-x-yGe_xC_y Alloys: Measurement of Band Off-Set by DLTS   [ 281 K ]
  Authors: M. Serpentini, G. Brémond
• p171 Molecular-Dynamics Simulations of Microscopic Defects in Silicon   [ 536 K ]
  Authors: Stefan K. Estreicher, Peter A. Fedders
• p179 Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon   [ 399 K ]
  Authors: R.L. Lichti, K.H. Chow, S.F.J. Cox, T.L. Estle, B. Hitti, C. Schwab
• p185 Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM   [ 236 K ]
  Authors: Y. Ohmura, M. Libezny, M. Ohtaka, A. Kimoto, M. Yamaura
• p191 Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage   [ 261 K ]
  Authors: M.I. Symko, Bhushan L. Sopori, Robert Reedy, Kim M. Jones