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Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

• Papers
• Abstracts

• p319 Hydrogenation of Copper Related Deep States in n-Type Si Containing Extended Defects   [ 304 K ]
  Authors: J. Kaniewski, M. Kaniewska, L. Ornoch, Takashi Sekiguchi, Koji Sumino
• p325 Hydrogenation of Deep Defect States in n-Type Si Containing Extended Defects and Transition Metal (Ni or Fe)   [ 322 K ]
  Authors: M. Kaniewska, J. Kaniewski, L. Ornoch, Takashi Sekiguchi, Koji Sumino
• p331 Metastable Defects and Recombination in Hydrogenated Amorphous Silicon   [ 239 K ]
  Authors: E. Morgado, R.T. Henriques
• p337 Tracing Diffusion by Laplace Deep-Level Spectroscopy   [ 231 K ]
  Authors: K. Bonde Nielsen, L. Dobaczewski
• p341 Defects in AS-Grown Silicon and their Evolution During Heat Treatments   [ 407 K ]
  Authors: Jan Vanhellemont, E. Dornberger, J. Esfandyari, G. Kissinger, M.-A. Trauwaert, H. Bender, D. Gräf, U. Lambert, Wilfried von Ammon
• p347 An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering   [ 605 K ]
  Authors: S.A. McQuaid, B.K. Johnson, Robert Falster, K.F. Kelton
• p355 Temperature-Dependent Widths of Infrared and Far-Infrared Absorption Lines of Oxygen in Silicon   [ 310 K ]
  Authors: Hiroshi Yamada-Kaneta
• p361 The Oxygen Dimer in Silicon: Some Experimental Observations   [ 401 K ]
  Authors: T. Hallberg, J. Lennart Lindström, L.I. Murin, V.P. Markevich
• p367 Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C   [ 400 K ]
  Authors: J. Lennart Lindström, T. Hallberg, P. Liberski, B.G. Svensson, L.I. Murin, V.P. Markevich
• p373 High-Field EPR Spectroscopy of Thermal Donors in Silicon   [ 362 K ]
  Authors: Ruud Dirksen, F. Berg Rasmussen, T. Gregorkiewicz, C.A.J. Ammerlaan