Silicon Carbide, III-Nitrides and Related Materials
Materials Science Forum Volumes 264 - 268
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p3
SiC Seeded Boule Growth
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576 K
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Authors: Valeri F. Tsvetkov, R.C. Glass, D. Henshall, Calvin H. Carter Jr., D. Asbury -
p9
High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
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201 K
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Authors: G. Augustine, H. McD. Hobgood, V. Balakrishna, G.T. Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi -
p13
Sublimation Growth of 50mm Diameter SiC Wafers
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303 K
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Authors: Adrian R. Powell, Shao Ping Wang, G. Fechko, George R. Brandes -
p17
Experimental Investigation of 4H-SiC Bulk Crystal Growth
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257 K
]
Authors: K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons -
p21
Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
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346 K
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Authors: Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya -
p25
Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
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319 K
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Authors: J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama -
p29
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
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428 K
]
Authors: S. Milita, R. Pons, J. Baruchel, A. Mazuelas -
p33
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
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349 K
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Authors: Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker -
p37
The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
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311 K
]
Authors: V.D. Heydemann, Gregory S. Rohrer, Edward M. Sanchez, Marek Skowronski -
p41
Defect Formation Mechanism of Bulk SiC
[
287 K
]
Authors: Makato Sasaki, Y. Nishio, Shigehiro Nishino, Shinichi Nakashima, Hiroshi Harima
