Silicon Carbide, III-Nitrides and Related Materials
Materials Science Forum Volumes 264 - 268
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p45
Enlargement of SiC Crystals: Defect Formation at the Interfaces
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378 K
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Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons -
p49
Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
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260 K
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Authors: Noboru Ohtani, Masakazu Katsuno, J. Takahashi, Hirokatsu Yashiro, M. Kanaya, S. Shinoyama -
p53
Optically Transparent 6H-Silicon Carbide
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321 K
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Authors: Andrey S. Bakin, Sergey I. Dorozhkin, A.S. Zubrilov, N.I. Kuznetsov, Yuri M. Tairov -
p57
Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
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246 K
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Authors: Stephan G. Müller, Robert Eckstein, Dieter Hofmann, L. Kadinski, P. Kaufmann, M. Kölbl, Erwin Schmitt -
p61
Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container
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257 K
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Authors: Yu.E. Egorov, A.O. Galyukov, S.G. Gurevich, Yuri N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, A.N. Vorob'ev, A.I. Zhmakin -
p65
A Coupled Finite Element Model for the Sublimation Growth of SiC
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190 K
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Authors: P. Råback, Risto M. Nieminen, Rositza Yakimova, M. Tuominen, Erik Janzén -
p69
Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
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450 K
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Authors: M. Müller, Matthias Bickermann, Dieter Hofmann, Arnd Dietrich Weber, Albrecht Winnacker -
p73
Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions
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236 K
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Authors: V. Ivantsov, Vladimir Dmitriev -
p77
Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates
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219 K
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Authors: H.N. Jayatirtha, Michael G. Spencer -
p83
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
[
371 K
]
Authors: Al A. Burk, Michael J. O'Loughlin, S.S. Mani
