Silicon Carbide, III-Nitrides and Related Materials
Materials Science Forum Volumes 264 - 268
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p429
Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals
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419 K
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Authors: W. Si, Michael Dudley, R.C. Glass, Calvin H. Carter Jr., Valeri F. Tsvetkov -
p433
Structural Characterization of SiC Crystals Grown by Physical Vapor Transport
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371 K
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Authors: Edward M. Sanchez, V.D. Heydemann, Gregory S. Rohrer, Marek Skowronski, J. Solomon, Michael A. Capano, W.C. Mitchel -
p437
Investigation of Polymorphism and Estimation of Lattice Constants of SiC Epilayers by Four Circle X-Ray Diffraction
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171 K
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Authors: Henry Romanus, G. Teichert, Lothar Spieß -
p441
Site Identification of 6H-SiC Using RBS/Channeling Technique
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172 K
]
Authors: Masataka Satoh, K. Okamoto, Y. Iwata, K. Kuriyama, M. Kanaya, Noboru Ohtani -
p445
Structural Characterization of 3C-SiC Epitaxially Grown on Si-On-Insulator
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466 K
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Authors: V. Papaioannou, E. Pavlidou, J. Stoemenos, W. Reichelt, E. Obermeier -
p449
Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering
[
311 K
]
Authors: Hiroshi Harima, Takahiro Hosoda, Shinichi Nakashima -
p455
Optical Properties of Silicon Carbide: Some Recent Developments
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353 K
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Authors: Robert P. Devaty, W.J. Choyke, S.G. Sridhara, L.L. Clemen, D.G. Nizhner, David J. Larkin, T. Troffer, Gerhard Pensl, Tsunenobu Kimoto, H.S. Kong -
p461
Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
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202 K
]
Authors: S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, W.J. Choyke, T. Troffer, Gerhard Pensl, David J. Larkin, H.S. Kong -
p465
Phosphorus Four Particle Donor Bound Exciton Complex in 6H SiC
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228 K
]
Authors: S.G. Sridhara, L.L. Clemen, D.G. Nizhner, Robert P. Devaty, W.J. Choyke, David J. Larkin -
p469
Some Aspects of the Photoluminescence and Raman Spectroscopy of (10-10)- and (11-20)-Oriented 4H and 6H Silicon Carbide
[
219 K
]
Authors: I.G. Ivanov, Christer Hallin, Anne Henry, T. Egilsson, Erik Janzén
