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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

• Papers
• Abstracts

• p135 Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth   [ 331 K ]
  Authors: Kai Christiansen, T. Dalibor, Reinhard Helbig, S. Christiansen, Horst P. Strunk
• p139 Epitaxial Growth of SiC on α-SiC Using Si₂Cl₆+C₃H₈+H₂ System   [ 325 K ]
  Authors: Shigehiro Nishino, Toshiyuki Miyanagi, Y. Nishio
• p143 High Growth Rate of α-SiC by Sublimation Epitaxy   [ 424 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, Mike F. MacMillan, M. Tuominen, A. Kakanakova-Georgieva, C. Hemmingsson, I.G. Ivanov, Erik Janzén
• p147 The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique   [ 218 K ]
  Authors: A. Kakanakova-Georgieva, Mike F. MacMillan, Shigehiro Nishino, Rositza Yakimova, Erik Janzén
• p151 Domain Occurance in SiC Epitaxial Layers Grown by Sublimation   [ 227 K ]
  Authors: M. Tuominen, Rositza Yakimova, A. Kakanakova-Georgieva, Mike F. MacMillan, Mikael Syväjärvi, Erik Janzén
• p155 Epitaxy of High Quality SiC Layers by CST   [ 283 K ]
  Authors: Takeru Yoshida, Y. Nishio, S.K. Lilov, Shigehiro Nishino
• p159 Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC   [ 236 K ]
  Authors: Rositza Yakimova, Mikael Syväjärvi, Erik Janzén
• p163 High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy   [ 225 K ]
  Authors: S.V. Rendakova, V. Ivantsov, Vladimir Dmitriev
• p167 Thick Film SiC Epitaxy for 'Filling Up' Micropipes   [ 326 K ]
  Authors: I.I. Khlebnikov, V. Madangarli, M.A. Khan, Tangali S. Sudarshan
• p171 A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy   [ 221 K ]
  Authors: H. Möller, W. Legner, G. Krötz