Silicon Carbide, III-Nitrides and Related Materials
Materials Science Forum Volumes 264 - 268
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p175
Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
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209 K
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Authors: Kyung Won Lee, K.-S. Yu, Joon Woo Bae, Y. Kim -
p179
Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence
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213 K
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Authors: Chien-Hung Wu, A.J. Fleischman, Christian A. Zorman, M. Mehregany -
p183
CVD Growth Mechanism of 3C-SiC on Si Substrates
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358 K
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Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa -
p187
Growth of Epitaxial Cubic SiC Thin Films Using Single Source Precursors
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302 K
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Authors: Jin Hyo Boo, Soon Bok Lee, S.A. Ustin, W. Ho, H.P. Maruska, P.E. Norris, Il Ho Kim, C. Sung -
p191
Crystallinity of 3C-SiC Films Grown on Si Substrates
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226 K
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Authors: Kuniaki Yagi, Hiroyuki Nagasawa -
p195
Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111) Substrates
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193 K
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Authors: H.W. Shim, K.C. Kim, Y.H. Seo, Kee Suk Nahm, Eun Kyung Suh, H.J. Lee, Y.G. Hwang -
p199
The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate
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274 K
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Authors: Y.H. Seo, K.C. Kim, H.W. Shim, Kee Suk Nahm, Eun Kyung Suh, H.J. Lee, Y.G. Hwang, D.-K. Kim, Byung Teak Lee -
p203
Study of Initial Stage of SiC Growth on Si(100) Surface by XPS, RHEED and SEM
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220 K
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Authors: T. Takaoka, Haruo Saito, Y. Igari, I. Kusunoki -
p207
Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates
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378 K
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Authors: Tetsuo Takahashi, Yuuki Ishida, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa -
p211
Effect of Substrate Bias on 3C-SiC Deposition on Si by AC Plasma-Assisted CVD
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218 K
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Authors: Hideki Shimizu, M. Shiga
