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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

• Papers
• Abstracts

• p215 Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon   [ 337 K ]
  Authors: J.K.N. Lindner, W. Reiber, B. Stritzker
• p219 Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon   [ 667 K ]
  Authors: R. Scholz, U.M. Gösele, Frank Wischmeyer, E. Niemann
• p223 Fabrication of 3C-SiC on SiO₂ Structures Using Wafer Bonding Techniques   [ 324 K ]
  Authors: Christian A. Zorman, K.N. Vinod, A.A. Yasseen, M. Mehregany
• p227 Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate   [ 369 K ]
  Authors: Gabriel Ferro, H. Vincent, Yves Monteil, Didier Chaussende, J. Bouix
• p231 Germanium as a Possible Surfactant for Growth of Beta Silicon Carbide on Silicon Substrates   [ 149 K ]
  Authors: S. Mitchell, Michael G. Spencer, K. Wongchotigul
• p235 Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System   [ 218 K ]
  Authors: Tomoaki Hatayama, Takashi Fuyuki, Hiroyuki Matsunami
• p239 Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane   [ 219 K ]
  Authors: Jin Ming Chen, A.J. Steckl, Mark J. Loboda
• p243 Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD   [ 251 K ]
  Authors: M. Uchida, M. Deguchi, Kazuhiko Takahashi, Makoto Kitabatake, M. Kitagawa
• p247 Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE   [ 308 K ]
  Authors: Jan Philipp Schmidt-Ewig, T. Troffer, Kai Christiansen, S. Christiansen, Reinhard Helbig, Gerhard Pensl, Horst P. Strunk
• p251 Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy   [ 258 K ]
  Authors: Jörg Pezoldt, Thomas Stauden, Volker Cimalla, Gernot Ecke, Henry Romanus, G. Eichhorn