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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

• Papers
• Abstracts

• p299 The Effects of Interfacial Dipoles on the Properties of SiC-Group III-Nitride Hetero-Structures   [ 256 K ]
  Authors: G. Lucovsky, H. Yang, G. Lüpke
• p303 Pressure-Dependent Dynamical and Dielectric Properties of GaN and AlN   [ 212 K ]
  Authors: K. Karch, J.-M. Wagner, H. Siegle, C. Thomsen, Friedhelm Bechstedt
• p307 Theoretical and Experimental Study of the Lattice-Dynamical Properties of Cubic GaN   [ 200 K ]
  Authors: H. Sterner, A. Schewiola, K. Karch, P. Pavone, Dieter Strauch, H. Siegle, G. Kaczmarczyk, L. Filippidis, C. Thomsen
• p311 Electronic States of BC₂N Heterodiamond (111) Superlattices   [ 219 K ]
  Authors: Y. Tateyama, K. Kusakabe, T. Ogitsu, S. Tsuneyuki
• p315 From Precursor Atoms Towards Hetero-Phases: Strain-Dynamics Induced Carbon-Rich Si_1-xC_x Phases   [ 259 K ]
  Authors: György Vida, N. Moreaud, J. Calas, M. Averous
• p321 Large Unit Cell Superstructures on Hexagonal SiC-Sufaces Studied by LEED, AES and STM   [ 322 K ]
  Authors: Ulrich Starke, M. Franke, J. Bernhardt, J. Schardt, K. Reuter, K. Heinz
• p327 Surface Reconstructions of 6H-SiC(0001) and Surface-Structure-Controlled Epitaxial Growth   [ 220 K ]
  Authors: Makoto Kitabatake
• p331 Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface   [ 303 K ]
  Authors: M. Hollering, B. Mattern, F. Maier, Lothar Ley, A.P.J. Stampfl, J. Xue, J.D. Riley, R.C.G. Leckey
• p335 Deposition of Cs on Graphitized 4H-SiC Surfaces   [ 231 K ]
  Authors: V. van Elsbergen, H. Nienhaus, Winfried Mönch
• p339 Theory of Si-Rich SiC Surfaces: Consequences for Epitaxial Growth   [ 234 K ]
  Authors: J. Furthmüller, P. Käckell, Friedhelm Bechstedt, Andreas Fissel, K. Pfennighaus, B. Schröter, W. Richter