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Ultrafast Phenomena in Semiconductors

Materials Science Forum Volumes 297 - 298

• Papers
• Abstracts

• p303 Electrical Transport Effects in the Epitaxial La_0.67Ca_0.33MnO₃ Films and La_0.67Ca_0.33MnO₃/(LaNiO₃, RuO₂) Heterostructures   [ 242 K ]
  Authors: B. Vengalis, Antanas K. Oginskis, V. Lisauskas, N. Shiktorov, V. Jasutis, S.A. Karpinskas, A. Česnys, A. Maneikis
• p307 Light Emission due to Hot-Electron Direct Transitions in Silicon   [ 240 K ]
  Authors: T. Puritis
• p311 Generation of Donor Centers in p-InSb Laser Radiation   [ 204 K ]
  Authors: Arthur Medvid, L. Fedorenko
• p315 Enhancement of the Third Harmonic Generation Efficiency in n-Type Si and InP by Cooling from Room Temperature to 80K   [ 236 K ]
  Authors: Ph. Moreau, M.R. Siegrist, R. Brazis, R. Raguotis
• p319 Influence of Composition in GaAs/AlGaAs Heterojunctions on Microwave Detection   [ 205 K ]
  Authors: S. Ašmontas, Jonas Gradauskas, J. Kundrotas, Algirdas Sužiedėlis, A. Šilėnas, G. Valušis
• p323 Nature of Ultrafast Recombination in a-Si:H   [ 172 K ]
  Authors: G. Juška, K. Arlauskas
• p327 Charge Carrier Transport in μc-Si:H   [ 158 K ]
  Authors: G. Juška, K. Arlauskas, K. Genevičius, J. Kočka
• p333 Study of the Non Linear I-U Characteristic of the Heterostructure α-Si/c-Si   [ 202 K ]
  Authors: K.G. Kyritsi, A.N. Anagnostopoulos, G.L. Bleris, V.A. Samuilov, A. Čenys
• p337 THz Frequency Power Generation Possibility due to Nonparabolicity in n⁺- n - n⁺ 4H-SiC Structures   [ 220 K ]
  Authors: Viktor Gružinskis, Jian H. Zhao, P. Shiktorov, E. Starikov
• p341 Gunn Effect and THz Frequency Power Generation in n⁺- n - n⁺ GaN Structures   [ 205 K ]
  Authors: Viktor Gružinskis, Jian H. Zhao, P. Shiktorov, E. Starikov