Silicon Carbide and Related Materials - 1999
Materials Science Forum Volumes 338 - 342
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p47
Seed Surface Preparation for SiC Sublimation Growth
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328 K
]
Authors: Bernard Pelissier, Cécile Moulin, Etienne Pernot, Mikhail Anikin, Philippe Grosse, Christian Faure, Bernard Ferrand, M. Couchaud, Gérard Basset, Roland Madar -
p51
Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
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286 K
]
Authors: Sohei Okada, Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino -
p55
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
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308 K
]
Authors: Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski -
p59
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
[
326 K
]
Authors: I.I. Khlebnikov, Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Tangali S. Sudarshan -
p63
Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
[
242 K
]
Authors: Edward M. Sanchez, V.D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski -
p67
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
[
379 K
]
Authors: Seo Young Ha, Gregory S. Rohrer, Marek Skowronski, V.D. Heydemann, David W. Snyder -
p71
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
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280 K
]
Authors: Peter J. Wellmann, Matthias Bickermann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker -
p75
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
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218 K
]
Authors: Naoki Oyanagi, Shin Ichi Nishizawa, Tomohisa Kato, Hirotaka Yamaguchi, Kazuo Arai -
p79
Role of Temperature Gradient in Bulk Crystal Growth of SiC
[
218 K
]
Authors: Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, Nikolay K. Yushin -
p83
Pressure Effect in Sublimation Growth of Bulk SiC
[
309 K
]
Authors: Yasuo Kitou, Wook Bahng, Shin Ichi Nishizawa, Shigehiro Nishino, Kazuo Arai
