HOME CONTACT

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p419 Study of a Clean Surface of α - SiC and its Metallization Process by Cu, Au and Ni using STM and Electron/Photon Spectroscopies   [ 195 K ]
  Authors: Motohiro Iwami, Masaaki Hirai, Masahiko Kusaka, I. Mihara, T. Saito, Masaharu Yamaguchi, T. Morii, Masanori Watanabe
• p423 Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC   [ 243 K ]
  Authors: K.W. Bryant, M.J. Bozack
• p427 Group-ΙΙΙ Adsorption and Bond Stacking on SiC(111) Surfaces   [ 232 K ]
  Authors: Ulrike Grossner, J. Furthmüller, Friedhelm Bechstedt
• p431 Characterization of SiC using Synchrotron White Beam X-ray Topography   [ 552 K ]
  Authors: Michael Dudley, X. Huang
• p437 Growth of Low Micropipe Density SiC Wafers   [ 272 K ]
  Authors: Adrian R. Powell, Shao Ping Wang, George R. Brandes
• p441 Investigation of the Origin of Micropipe Defect   [ 300 K ]
  Authors: Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya
• p445 Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals   [ 281 K ]
  Authors: Dieter Hofmann, Matthias Bickermann, Wolfgang Hartung, Albrecht Winnacker
• p449 Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal   [ 237 K ]
  Authors: Tomohisa Kato, Hitoshi Ohsato, Takashi Okuda
• p453 Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes   [ 382 K ]
  Authors: M. Shamsuzzoha, S.E. Saddow, T.E. Schattner, Li Jin, Michael Dudley, S.V. Rendakova, Vladimir Dmitriev
• p457 In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography   [ 222 K ]
  Authors: Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shin Ichi Nishizawa, Kazuo Arai