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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p87 Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT   [ 162 K ]
  Authors: D. Schulz, K. Irmscher, J. Dolle, W. Eiserbeck, Timo Müller, H. J. Rost, D. Siche, Günter Wagner, Jürgen Wollweber
• p91 Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics   [ 240 K ]
  Authors: Alexander Pisch, Ana Maria Ferraria, Christian Chatillon, Elisabeth Blanquet, Michel Pons, Claude Bernard, Mikhail Anikin, Roland Madar
• p95 Considerations on the Crystal Morphology in the Sublimation Growth of SiC   [ 217 K ]
  Authors: P. Råback, Rositza Yakimova, Mikael Syväjärvi, T. Iakimov, Risto M. Nieminen, Erik Janzén
• p99 Shape of SiC Bulk Single Crystal Grown by Sublimation   [ 284 K ]
  Authors: Shin Ichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai
• p103 Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid   [ 289 K ]
  Authors: Wook Bahng, Yasuo Kitou, Shin Ichi Nishizawa, Hirotaka Yamaguchi, Muhammad Nasir Khan, Naoki Oyanagi, Kazuo Arai, Shigehiro Nishino
• p107 Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes   [ 294 K ]
  Authors: Boris M. Epelbaum, Dieter Hofmann, M. Müller, Albrecht Winnacker
• p111 Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method   [ 325 K ]
  Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl
• p115 Crystal Growth of 15R-SiC Boules by Sublimation Method   [ 222 K ]
  Authors: Taro Nishiguchi, Sohei Okada, Makato Sasaki, Hiroshi Harima, Shigehiro Nishino
• p119 Growth of 3C SiC Single Crystals from Convection Dominated Melts   [ 168 K ]
  Authors: Jürgen Wollweber, V. Chévrier, D. Siche, Th. Duffar
• p125 An Overview of SiC Growth   [ 373 K ]
  Authors: Hiroyuki Matsunami