Silicon Carbide and Related Materials - 1999
Materials Science Forum Volumes 338 - 342
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p173
Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers
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231 K
]
Authors: H.D. Nordby, Jr., Michael J. O'Loughlin, Mike F. MacMillan, Al A. Burk, James D. Oliver -
p177
Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane
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240 K
]
Authors: Sung Yong Lee, Kyung Won Lee, Yunsoo Kim -
p181
Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide
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314 K
]
Authors: K.D. Jamison, M.L. Kempel, R.L. Woodin, J.D. Shovlin, D. Beck, Q. Li, M.E. Kordesch -
p185
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
[
253 K
]
Authors: B.E. Landini, George R. Brandes -
p189
4H-SiC (11-20) Epitaxial Growth
[
206 K
]
Authors: Tsunenobu Kimoto, Toshihiro Yamamoto, Zhi Yong Chen, Hiroshi Yano, Hiroyuki Matsunami -
p193
Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres
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319 K
]
Authors: Kai Christiansen, S. Christiansen, Horst P. Strunk, Reinhard Helbig -
p197
Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
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310 K
]
Authors: Shigehiro Nishino, Y. Nishio, Yasuichi Masuda, Yi Chen, Chacko Jacob -
p201
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
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305 K
]
Authors: Shun-ichi Nakamura, Tomoaki Hatayama, Tsunenobu Kimoto, Takashi Fuyuki, Hiroyuki Matsunami -
p205
Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC
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333 K
]
Authors: Andreas Fissel, Ute Kaiser, B. Schröter, J. Kräußlich, H. Hobert, W. Richter -
p209
Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes
[
266 K
]
Authors: Andreas Fissel
