Silicon Carbide and Related Materials - 1999
Materials Science Forum Volumes 338 - 342
-
p213
Mechanisms of SiC(111) Step Flow Growth
[
413 K
]
Authors: Phillip J. Stout -
p217
Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
[
237 K
]
Authors: Tomoaki Furusho, K. Matsumoto, Hiroshi Harima, Shigehiro Nishino -
p221
Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy
[
163 K
]
Authors: D.V. Davydov, A.A. Lebedev, A.S. Tregubova, V.V. Kozlovski, A.N. Kuznetsov, E.V. Bogdanova -
p225
Growth of SiC and GaN on Porous Buffer Layers
[
232 K
]
Authors: M. Mynbaeva, N.S. Savkina, A.S. Tregubova, M.P. Scheglov, A.A. Lebedev, A.S. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, N.V. Seredova, D. Tsvetkov, S. Stepanov, A.E. Cherenkov, I. Kotousova, Vladimir Dmitriev -
p229
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
[
177 K
]
Authors: N.I. Kuznetsov, A. Morozov, D. Bauman, V. Ivantsov, V. Sukhoveyev, I. Nikitina, A.S. Zubrilov, S.V. Rendakova, Vladimir Dmitriev, D. Hofman, György Vida -
p233
Temperature Gradient Effect on SiC Epitaxy in Liquid Phase
[
370 K
]
Authors: Muhammad Nasir Khan, Shin Ichi Nishizawa, Wook Bahng, Kazuo Arai -
p237
Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
[
419 K
]
Authors: Rositza Yakimova, Mikael Syväjärvi, S.V. Rendakova, Vladimir Dmitriev, Anne Henry, Erik Janzén -
p241
Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor
[
481 K
]
Authors: André Leycuras -
p245
Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates
[
292 K
]
Authors: S.E. Saddow, G.E. Carter, Bruce Geil, T.S. Zheleva, Galyna Melnychuck, M.E. Okhuysen, Michael S. Mazzola, R.D. Vispute, Michael A. Derenge, Matthew H. Ervin, Kenneth A. Jones -
p249
Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane
[
260 K
]
Authors: Chacko Jacob, Moon Hi Hong, Juyong Chung, P. Pirouz, Shigehiro Nishino
