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Silicon Carbide and Related Materials - 1999

Materials Science Forum Volumes 338 - 342

• Papers
• Abstracts

• p379 Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals   [ 454 K ]
  Authors: Noboru Ohtani, Masakazu Katsuno, Takashi Aigo, Hirokatsu Yashiro, M. Kanaya
• p383 Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiC   [ 263 K ]
  Authors: J. Bernhardt, J. Schardt, Ulrich Starke, K. Heinz
• p387 Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC   [ 298 K ]
  Authors: M. Hollering, N. Sieber, F. Maier, Jürgen Ristein, Lothar Ley, J.D. Riley, R.C.G. Leckey, F. Leisenberger, F. Netzer
• p391 Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001)   [ 221 K ]
  Authors: N. Sieber, M. Hollering, Jürgen Ristein, Lothar Ley
• p395 Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface   [ 272 K ]
  Authors: F. Amy, Y.K. Hwu, C. Brylinski, P. Soukiassian
• p399 XPS Analysis of SiO₂/SiC Interface Annealed in Nitric Oxide Ambient   [ 214 K ]
  Authors: H.-F. Li, Sima Dimitrijev, D. Sweatman, H.B. Harrison
• p403 Surface Studies on Thermal Oxidation on 4H-SiC Epilayer   [ 267 K ]
  Authors: A. Koh, A. Kestle, S.P. Wilks, P.R. Dunstan, C.J. Wright, M. Pritchard, G. Pope, P.A. Mawby, W.R. Bowen
• p407 Quantified Conditions for Reduction of ESO Contamination During SiC Metalization   [ 266 K ]
  Authors: G.Y. McDaniel, S.T. Fenstermaker, D.E. Walker Jr., W.V. Lampert, S.M. Mukhopadhyay, P.H. Holloway
• p411 Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization   [ 269 K ]
  Authors: D. Defives, O. Durand, F. Wyczisk, J. Olivier, Olivier Noblanc, C. Brylinski
• p415 A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures   [ 198 K ]
  Authors: Wei Jie Lu, D.T. Shi, T.R. Crenshaw, A. Burger, W.E. Collins