Silicon Carbide and Related Materials 2000
Materials Science Forum Volumes 353 - 356
-
p45
Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
[
238 K
]
Authors: Norbert Schulze, Jürgen Gajowski, Kurt Semmelroth, Michael Laube, Gerhard Pensl -
p49
Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
[
260 K
]
Authors: Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker -
p53
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
[
252 K
]
Authors: Sergey A. Reshanov, V.P. Rastegaev, Yuri M. Tairov -
p57
Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization
[
240 K
]
Authors: M.V. Bogdanov, O.V. Bord, A.O. Galyukov, S.Yu. Karpov, A.V. Kulik, S.K. Kochuguev, A.E. Komissarov, D.Kh. Ofengeim, A.M. Serkov, A.V. Tsiryulnikov, I.A. Zhmakin, M.S. Ramm, A.I. Zhmakin, Yuri N. Makarov -
p61
Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method
[
191 K
]
Authors: Alexander Pisch, Elisabeth Blanquet, Michel Pons, Claude Bernard, Jean-Marc Dedulle, Roland Madar -
p65
Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
[
249 K
]
Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Peter J. Wellmann, Dieter Hofmann -
p69
Crystal Growth of 15R-SiC and Various Polytype Substrates
[
264 K
]
Authors: Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino -
p73
Micropipe Filling by the Sublimation Close Space Technique
[
210 K
]
Authors: Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino -
p77
Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method
[
312 K
]
Authors: T. Shimizu, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino -
p81
Chemical Vapor Deposition of SiC by the Temperature Oscillation Method
[
172 K
]
Authors: Yu.V. Martynov
