Silicon Carbide and Related Materials 2000
Materials Science Forum Volumes 353 - 356
-
p413
Prediction of Optical Properties of Si and Ge Dots in SiC
[
201 K
]
Authors: Hans-Christian Weissker, J. Furthmüller, Friedhelm Bechstedt -
p417
Investigation of Variable Incidence Angle Spectroscopic Ellipsometry for Determination of Below Band Gap Uniaxial Dielectric Function
[
218 K
]
Authors: Morten Kildemo, Ola Hunderi -
p421
Theory of Hydrogen in Silicon Carbide
[
324 K
]
Authors: Peter Deák, A. Gali, B. Aradi -
p427
Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
[
245 K
]
Authors: Martin S. Janson, Anders Hallén, Margareta K. Linnarsson, Nils Nordell, S. Karlsson, B.G. Svensson -
p431
Proton Irradiation Induced Defects in 4H-SiC
[
228 K
]
Authors: L. Storasta, F.H.C. Carlsson, S.G. Sridhara, Boleslaw Formanek, J.Peder Bergman, Anders Hallén, Erik Janzén -
p435
Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs
[
234 K
]
Authors: E. Rauls, Z. Hajnal, A. Gali, Peter Deák, Thomas Frauenheim -
p439
Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
[
216 K
]
Authors: Thomas Frank, Michael Weidner, Hisayoshi Itoh, Gerhard Pensl -
p443
Implantation Temperature Dependent Deep Level Defects in 4H-SiC
[
227 K
]
Authors: Boleslaw Formanek, L. Storasta, Anders Hallén, B.G. Svensson -
p447
Boron in SiC: Structure and Kinetics
[
267 K
]
Authors: M. Bockstedte, Alexander Mattausch, Oleg Pankratov -
p451
Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
[
289 K
]
Authors: Adolf Schöner, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami
