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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

• Papers
• Abstracts

• p127 Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates   [ 318 K ]
  Authors: Chacko Jacob, P. Pirouz, Shigehiro Nishino
• p131 Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate   [ 282 K ]
  Authors: Hidekazu Tsuchida, Takashi Tsuji, Isaho Kamata, Tamotsu Jikimoto, Hiroyuki Fujisawa, Shinji Ogino, Kunikaza Izumi
• p135 Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates   [ 544 K ]
  Authors: Koh Masahara, Mitsuhiro Kushibe, H. Ohno, Kazutoshi Kojima, Tetsuo Takahashi, Takaya Suzuki, Yuuki Ishida, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
• p139 Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si₂Cl₆+C₃H₈ System   [ 336 K ]
  Authors: Yasuichi Masuda, Satoru Ohshima, Chacko Jacob, Shigehiro Nishino
• p143 Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates   [ 389 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Erik Janzén
• p147 SiC Polytype Transformation on the Growth Surface   [ 259 K ]
  Authors: E.N. Mokhov, S.K. Obyden, A.D. Roenkov, G.V. Saparin, Yu.A. Vodakov
• p151 Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing   [ 325 K ]
  Authors: D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz, Wolfgang Skorupa
• p155 How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates   [ 185 K ]
  Authors: Thierry Chassagne, Gabriel Ferro, C. Gourbeyre, M. Le Berre, Daniel Barbier, Yves Monteil
• p159 Growth of 3C-SiC on Si by Low Temperature CVD   [ 219 K ]
  Authors: T. Cloitre, N. Moreaud, Patrice Vicente, M.L. Sadowski, R.L. Aulombard
• p163 Growth of SiC on Si(100) by Low-Pressure MOVPE   [ 211 K ]
  Authors: Andrey S. Bakin, A.A. Ivanov, Kensaku Hisada, T. Riedl, F. Hitzel, H.-H. Wehmann, A. Schlachetzki