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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

• Papers
• Abstracts

• p211 Interplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiC   [ 246 K ]
  Authors: Ulrike Grossner, Andreas Fissel, J. Furthmüller, W. Richter, Friedhelm Bechstedt
• p215 Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3   [ 252 K ]
  Authors: F. Amy, Y.K. Hwu, C. Brylinski, P. Soukiassian
• p219 Comparison of HF and Ozone Treated SiC Surfaces   [ 273 K ]
  Authors: R.P. Mikalo, P. Hoffmann, D.R. Batchelor, Anita Lloyd Spetz, Ingemar Lundström, D. Schmeißer
• p223 Preparation and Characterization of Hydrogen Terminated 6H-SiC   [ 248 K ]
  Authors: N. Sieber, Thomas Seyller, B.F. Mantel, Jürgen Ristein, Lothar Ley
• p227 Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive Identification   [ 273 K ]
  Authors: B. Schröter, A. Winkelmann, Andreas Fissel, V. Lebedev, W. Richter
• p231 Surface Abstraction Reactions at Experimental Temperatures; a Theoretical Study of 4H-SiC(0001)   [ 234 K ]
  Authors: Jenny Olander, Karin Larsson
• p235 Combined Scanning Tunneling Microscopy and Photoemission Studies of the β-SiC(100) c(4x2) Surface Reconstruction   [ 267 K ]
  Authors: V. Derycke, P. Fonteneau, V.Yu. Aristov, H. Enriquez, P. Soukiassian
• p239 Investigation of the SiC Surface after Nitrogen Plasma Treatment   [ 215 K ]
  Authors: L.A. Bereznjakova, A.V. Shchukarev, V.I. Ivanov-Omskii
• p243 Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces   [ 460 K ]
  Authors: D. Schulz, J. Dolle, H. J. Rost, D. Siche, Jürgen Wollweber
• p247 Germanium on SiC(0001): Surface Structure and Nanocrystals   [ 299 K ]
  Authors: B. Schröter, K. Komlev, Ute Kaiser, G. Heß, G. Kipshidze, W. Richter