Silicon Carbide and Related Materials 2000
Materials Science Forum Volumes 353 - 356
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p251
Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC
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294 K
]
Authors: Liliana Kassamakova, Roumen Kakanakov, Ivan Kassamakov, K. Zekentes, Katerina Tsagaraki, Genoveva Atanasova -
p255
Ion-Irradiation Effect on the Ni/SiC Interface Reaction
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305 K
]
Authors: Fabrizio Roccaforte, Lucia Calcagno, Paolo Musumeci, Francesco La Via -
p259
Analysis of Strain and Defect Formation of Low-Dimensional Structures in SiC
[
340 K
]
Authors: Ute Kaiser, K. Saitoh, A. Chuvilin -
p263
Source Material Related Distribution of Defects in 6H-SiC Single Crystals
[
257 K
]
Authors: H. J. Rost, D. Siche, J. Dolle, D. Schulz, Jürgen Wollweber -
p267
Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
[
227 K
]
Authors: Makato Sasaki, Hiromu Shiomi, Shigehiro Nishino -
p271
Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
[
236 K
]
Authors: E. Szilágyi, N.Q. Khánh, Zsolt E. Horváth, T. Lohner, Gábor Battistig, Z. Zolnai, E. Kótai, J. Gyulai -
p275
Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC
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205 K
]
Authors: H.W. Kunert, T.P. Maurice, T. Hauser, Johan B. Malherbe, L.C. Prinsloo, D.J. Brink, L.A. Falkovsky, Jean Camassel -
p279
4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing
[
225 K
]
Authors: Roberta Nipoti, A. Carnera -
p283
X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide
[
360 K
]
Authors: Etienne Pernot, Michel Mermoux, J. Kreisel, O. Chaix-Pluchery, Petra Pernot-Rejmánková, Mikhail Anikin, Bernard Pelissier, A.M. Glazer, Roland Madar -
p287
X-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiC
[
208 K
]
Authors: Christoph Seitz, Andreas Magerl, Hans Heissenstein, Reinhard Helbig
