Silicon Carbide and Related Materials 2000
Materials Science Forum Volumes 353 - 356
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p291
High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers
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240 K
]
Authors: Henrik Jacobsson, Rositza Yakimova, Mikael Syväjärvi, J. Birch, T.O. Tuomi, Erik Janzén -
p295
Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
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294 K
]
Authors: Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Shin Ichi Nishizawa, Kazuo Arai -
p299
Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
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294 K
]
Authors: J.Peder Bergman, H. Lendenmann, Per Åke Nilsson, Ulf Lindefelt, P. Skytt -
p303
A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide
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462 K
]
Authors: D.J. Morrison, A. Keir, I.H. Preston, Keith P. Hilton, Michael J. Uren, C. Mark Johnson -
p307
Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing
[
416 K
]
Authors: Boris M. Epelbaum, Dieter Hofmann, U. Hecht, Albrecht Winnacker -
p311
Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
[
405 K
]
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi -
p315
Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC
[
556 K
]
Authors: P.O.Å. Persson, L. Hultman -
p319
Lattice Parameter Measurements of 3C-SiC Thin Films Grown on 6H-SiC(0001) Substrate Crystals
[
187 K
]
Authors: J. Kräußlich, Anton J. Bauer, B. Wunderlich, K. Goetz -
p323
Self Diffusion in SiC: the Role of Intrinsic Point Defects
[
249 K
]
Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov -
p327
Modeling of Boron Diffusion in Silicon Carbide
[
248 K
]
Authors: H. Bracht, Nicolaas Stolwijk, Michael Laube, Gerhard Pensl
