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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

• Papers
• Abstracts

• p331 Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC   [ 226 K ]
  Authors: C. Hülsen, N. Achtziger, J. Herold, W. Witthuhn
• p335 Optical Characterization of SiC Materials: Bulk and Implanted Layers   [ 311 K ]
  Authors: Jean Camassel, Patrice Vicente, L. Falkovski
• p341 Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC   [ 210 K ]
  Authors: S. Rohmfeld, Martin Hundhausen, Lothar Ley, Norbert Schulze, Gerhard Pensl
• p345 Micro-Raman and Photoluminescence Study on n-type 6H-SiC   [ 224 K ]
  Authors: Zhe Chuan Feng, S.J. Chua, A.G. Evans, John W. Steeds, K.P.J. Williams, G.D. Pitt
• p349 Low-Frequency Vibrational Spectroscopy in SiC Polytypes   [ 237 K ]
  Authors: B. Pajot, C. J. Fall, J.L. Cantin, Hans Jürgen von Bardeleben, R. Jones, Patrick R. Briddon, F. Gendron
• p353 Free Carrier Diffusion in 4H-SiC   [ 250 K ]
  Authors: Paulius Grivickas, A. Martinez, I. Mikulskas, Vytautas Grivickas, R. Tomašiunas, Jan Linnros, Ulf Lindefelt
• p357 Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy   [ 241 K ]
  Authors: Robert P. Devaty, Song Bai, W.J. Choyke, H. McD. Hobgood, David J. Larkin
• p361 Zeeman Effect of D₁ Bound Exciton in 4H-SiC   [ 238 K ]
  Authors: C.Q. Chen, Reinhard Helbig, Rainer Winkler, A. Wysmołek, M. Potemski
• p365 As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC   [ 195 K ]
  Authors: Bjorn Magnusson, Alexsandre Ellison, F.H.C. Carlsson, N.T. Son, Erik Janzén
• p369 Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons   [ 194 K ]
  Authors: Hans Heissenstein, Reinhard Helbig