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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

• Papers
• Abstracts

• p373 Presence of Hydrogen in SiC   [ 205 K ]
  Authors: Anne Henry, Bjorn Magnusson, Margareta K. Linnarsson, Alexsandre Ellison, Mikael Syväjärvi, Rositza Yakimova, Erik Janzén
• p377 Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC   [ 238 K ]
  Authors: S.G. Sridhara, F.H.C. Carlsson, J.Peder Bergman, Anne Henry, Erik Janzén
• p381 Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy   [ 225 K ]
  Authors: John W. Steeds, F. Carosella, A.G. Evans, M.M. Ismail, L. R. Danks, W. Voegeli
• p385 Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC   [ 251 K ]
  Authors: Julien Pernot, Jean Marie Bluet, Jean Camassel, Lea Di Cioccio
• p389 Investigation of Electroluminescence across 4H-SiC p⁺/n^-/n⁺ Structures Using Optical Emission Microscopy   [ 242 K ]
  Authors: Augustinas Galeckas, Jan Linnros, Bo Breitholtz, H. Bleichner
• p393 Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy   [ 234 K ]
  Authors: L. Masarotto, Jean Marie Bluet, M. Berenguer, P. Girard, Gérard Guillot
• p397 Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC   [ 240 K ]
  Authors: Roland Weingärtner, Matthias Bickermann, Dieter Hofmann, Michael Rasp, Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker
• p401 Low Temperature Photoluminescence Processes of ¹³C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method   [ 240 K ]
  Authors: Horst Sadowski, Norbert Schulze, Thomas Frank, Gerhard Pensl, Michael Laube, Reinhard Helbig
• p405 Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy   [ 249 K ]
  Authors: I.G. Ivanov, T. Egilsson, Jie Zhang, Alexsandre Ellison, Erik Janzén
• p409 Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study   [ 279 K ]
  Authors: Andreas Fissel, W. Richter