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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p55 Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC   [ 211 K ]
  Authors: Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Takashi Aigo, Hirokatsu Yashiro
• p59 Reduction of Macrodefects in Bulk SiC Single Crystals   [ 311 K ]
  Authors: Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, V.D. Heydemann, Mrityunjay Sharma, Nikolay K. Yushin
• p63 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals   [ 224 K ]
  Authors: Jürgen Wollweber, H. J. Rost, D. Schulz, D. Siche
• p67 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes   [ 257 K ]
  Authors: H. J. Rost, J. Doerschel, D. Schulz, D. Siche, Jürgen Wollweber
• p71 The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide   [ 299 K ]
  Authors: Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Shao Ping Wang, A.G. Timmerman
• p75 Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method   [ 487 K ]
  Authors: Fusao Hirose, Yasuo Kitou, Naoki Oyanagi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai
• p79 Observation of Planar Defects in 2-inch SiC Wafer   [ 343 K ]
  Authors: Hideaki Tanaka, Taro Nishiguchi, Makato Sasaki, Shigehiro Nishino
• p83 Flux-Controlled Sublimation Growth by an Inner Guide-Tube   [ 410 K ]
  Authors: Yasuo Kitou, Wook Bahng, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai
• p87 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method   [ 210 K ]
  Authors: Naoki Oyanagi, Hirotaka Yamaguchi, Tomohisa Kato, Shin Ichi Nishizawa, Kazuo Arai
• p91 'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging   [ 229 K ]
  Authors: Peter J. Wellmann, Z.G. Herro, Thomas L. Straubinger, Albrecht Winnacker