Silicon Carbide and Related Materials 2001
Materials Science Forum Volumes 389 - 393
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p423
Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
[
388 K
]
Authors: P.O.Å. Persson, J.M. Molina-Aldareguia, Henrik Jacobsson, J.Peder Bergman, T.O. Tuomi, W.J. Clegg, Erik Janzén, L. Hultman -
p427
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
[
299 K
]
Authors: Robert E. Stahlbush, Jeffery B. Fedison, Steve Arthur, L.B. Rowland, James W. Kretchmer, Shao Ping Wang -
p431
Optical Emission Microscopy of Structural Defects in 4H-SiC PiN Diodes
[
268 K
]
Authors: Augustinas Galeckas, Jan Linnros, Bo Breitholtz -
p435
Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
[
202 K
]
Authors: Jin Qiang Liu, Edward M. Sanchez, Marek Skowronski -
p439
Theoretical Calculation of Stacking Fault Energies in Silicon Carbide
[
156 K
]
Authors: Hisaomi Iwata, Ulf Lindefelt, Sven Öberg, Patrick R. Briddon -
p443
A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
[
227 K
]
Authors: Seo Young Ha, William M. Vetter, Michael Dudley, Marek Skowronski -
p447
Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
[
554 K
]
Authors: Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida -
p451
4H- to 3C-SiC Polytypic Transformation during Oxidation
[
270 K
]
Authors: Robert S. Okojie, Ming Xhang, P. Pirouz, Sergey P. Tumakha, Gregg Jessen, Leonard J. Brillson -
p455
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
[
274 K
]
Authors: B.J. Skromme, K. Palle, C.D. Poweleit, L.R. Bryant, William M. Vetter, Michael Dudley, K. Moore, T. Gehoski -
p459
Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers
[
237 K
]
Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida
