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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p179 High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor   [ 200 K ]
  Authors: Koh Masahara, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Johji Nishio, Kazutoshi Kojima, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
• p183 Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition   [ 196 K ]
  Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
• p187 Highly Uniform Epitaxial SiC-Layers Grown in a Hot-Wall CVD Reactor with Mechanical Rotation   [ 359 K ]
  Authors: Adolf Schöner, Andrey O. Konstantinov, S. Karlsson, R. Berge
• p191 Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation   [ 291 K ]
  Authors: Jie Zhang, Urban Forsberg, M. Isacson, Alexsandre Ellison, Anne Henry, Olle Kordina, Erik Janzén
• p195 Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction   [ 295 K ]
  Authors: Kazutoshi Kojima, Takaya Ohno, Junji Senzaki, Kenji Fukuda, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
• p199 Hot-Wall CVD Growth of 4H-SiC Using Si₂Cl₆+C₃H₈+H₂ System   [ 405 K ]
  Authors: Toshiyuki Miyanagi, Shigehiro Nishino
• p203 Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters   [ 214 K ]
  Authors: Urban Forsberg, Örjan Danielsson, Anne Henry, Margareta K. Linnarsson, Erik Janzén
• p207 Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System   [ 191 K ]
  Authors: Günter Wagner, W. Leitenberger, K. Irmscher, Frank Schmid, Michael Laube, Gerhard Pensl
• p211 Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor   [ 243 K ]
  Authors: Rong Jun Wang, I. Bhat, T.P. Chow
• p215 Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition   [ 176 K ]
  Authors: Johji Nishio, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Toshiyuki Ohno, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai