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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p219 Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition   [ 315 K ]
  Authors: Örjan Danielsson, S. Jönsson, Anne Henry, Erik Janzén
• p223 Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition   [ 227 K ]
  Authors: Michel Pons, Jérôme Mezière, Stephane Wan Tang Kuan, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon, Roland Madar
• p227 Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor   [ 216 K ]
  Authors: Mitsuru Hasegawa, Akihiro Miyauchi, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Toshiyuki Ohno, Johji Nishio, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai
• p231 Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers   [ 280 K ]
  Authors: Seo Young Ha, P. Mieszkowski, L.B. Rowland, Marek Skowronski
• p235 The Effect of Epitaxial Growth on Warp of SiC Wafers   [ 184 K ]
  Authors: Koji Nakayama, Youichi Miyanagi, K. Maruyama, Yoshihiro Okamoto, Hiromu Shiomi, Shigehiro Nishino
• p239 In Situ Etching of 4H-SiC in H₂ with Addition of HCl for Epitaxial CVD Growth   [ 206 K ]
  Authors: Jie Zhang, Olle Kordina, Alexsandre Ellison, Erik Janzén
• p243 Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD   [ 240 K ]
  Authors: Kunimasa Takahashi, Masao Uchida, Toshiya Yokogawa, Osamu Kusumoto, Kenya Yamashita, Ryouko Miyanaga, Makoto Kitabatake
• p247 Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique   [ 186 K ]
  Authors: Kunimasa Takahashi, Toshiya Yokogawa, Masao Uchida, Osamu Kusumoto, Kenya Yamashita, Ryouko Miyanaga, Makoto Kitabatake
• p251 Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces   [ 449 K ]
  Authors: Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, David J. Spry, Glenn M. Beheim, Emye Benavage, Phillip B. Abel, William M. Vetter, Michael Dudley
• p255 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates   [ 240 K ]
  Authors: Yi Chen, Tsunenobu Kimoto, Yuuichi Takeuchi, Hiroyuki Matsunami