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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p259 Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques   [ 231 K ]
  Authors: A. Kakanakova-Georgieva, Rositza Yakimova, Jie Zhang, L. Storasta, Mikael Syväjärvi, Erik Janzén
• p263 Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS   [ 195 K ]
  Authors: C. Sartel, Veronique Soulière, Jacques Dazord, Yves Monteil, I. El Harrouni, Jean Marie Bluet, Gérard Guillot
• p267 Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor   [ 249 K ]
  Authors: Jae Kyeong Jeong, Myung Yoon Um, Hoon Joo Na, Bum Seok Kim, In Bok Song, Hyeong Joon Kim
• p271 TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial Growth   [ 366 K ]
  Authors: L.M. Sorokin, John L. Hutchison, Jeremy Sloan, G.N. Mosina, N.S. Savkina, V.B. Shuman, A.A. Lebedev
• p275 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics   [ 205 K ]
  Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida
• p279 Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy   [ 271 K ]
  Authors: Tomoaki Furusho, Toshiyuki Miyanagi, Yoichi Okui, Satoru Ohshima, Shigehiro Nishino
• p283 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers   [ 326 K ]
  Authors: Rositza Yakimova, Henrik Jacobsson, Mikael Syväjärvi, A. Kakanakova-Georgieva, T. Iakimov, Charíya Virojanadara, Leif I. Johansson, Erik Janzén
• p287 Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers   [ 314 K ]
  Authors: Gabriel Ferro, Didier Chaussende, François Cauwet, Yves Monteil
• p291 Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts   [ 406 K ]
  Authors: Alexander Syrkin, Vladimir Dmitriev, O. Kovalenkov, D. Bauman, John Crofton
• p295 Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC   [ 364 K ]
  Authors: Yasushi Asaoka, M. Hiramoto, Nao Yuki Sano, Tsutommu Kaneko