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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p299 Homoepitaxial Growth of 4H-SiC Thin Film Below 1000ºC by Microwave Plasma Chemical Vapor Deposition   [ 320 K ]
  Authors: Mitsuo Okamoto, Ryouji Kosugi, Yasunori Tanaka, Daisuke Takeuchi, Shinichi Nakashima, Shin Ichi Nishizawa, Kenji Fukuda, Hideyo Okushi, Kazuo Arai
• p303 In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source   [ 204 K ]
  Authors: Rong Jun Wang, I. Bhat, T.P. Chow
• p307 SiO₂ as Oxygen Source for the Chemical Vapor Transport of SiC   [ 278 K ]
  Authors: Christophe Jacquier, Gabriel Ferro, François Cauwet, Yves Monteil
• p311 Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy   [ 361 K ]
  Authors: Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek, X. Huang, Michael Dudley
• p315 3C-SiC Growth on 6H-SiC (0001) Substrates   [ 281 K ]
  Authors: Igor Matko, Bernard Chenevier, M. Audier, Roland Madar, M. Diani, L. Simon, L. Kubler, D. Aubel
• p319 Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates   [ 305 K ]
  Authors: Hiroyuki Nagasawa, Takamitsu Kawahara, Kuniaki Yagi
• p323 Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films   [ 443 K ]
  Authors: Tetsuo Takahashi, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata, Hajime Okumura, Sadafumi Yoshida, Kazuo Arai
• p327 Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers   [ 318 K ]
  Authors: Andrey S. Bakin, I. Behrens, A.A. Ivanov, E. Peiner, D. Piester, H.-H. Wehmann, A. Schlachetzki
• p331 Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate   [ 265 K ]
  Authors: Yoichi Okui, Chacko Jacob, Satoru Ohshima, Shigehiro Nishino
• p335 Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by Ellipsometry   [ 208 K ]
  Authors: Hideki Shimizu, Takaomi Ohba, Kensaku Hisada