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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p339 In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVD   [ 209 K ]
  Authors: Guo Sheng Sun, M.C. Luo, Lei Wang, S.R. Zhu, Jin Min Li, Yi Ping Zeng, L.Y. Lin
• p343 Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI   [ 231 K ]
  Authors: Thierry Chassagne, Gabriel Ferro, Huiyao Wang, Y. Stoimenos, Hervé Peyre, Sylvie Contreras, Jean Camassel, Yves Monteil, B. Ghyselen
• p347 Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric Furnace   [ 287 K ]
  Authors: Seisaku Hirai, Fumihiko Jobe, Motoi Nakao, Katsutoshi Izumi
• p351 Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer Layer   [ 213 K ]
  Authors: Hideki Nakazawa, M. Suemitsu
• p355 Electrical Characterization of SiC/Si Heterostructures with Modified Interfaces   [ 231 K ]
  Authors: Christian Förster, Pierre M. Masri, Jörg Pezoldt
• p359 Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon   [ 199 K ]
  Authors: Olga H. Krafcsik, György Vida, V. Katalin Josepovits, Peter Deák, György Z. Radnóczi, Béla Pécz, István Bársony
• p363 Reaction Mechanism of the Carbonization Process by Low-Energy Ion Subplantation   [ 183 K ]
  Authors: Nobuteru Tsubouchi, Akiyoshi Chayahara, Yoshiaki Mokuno, Atsushi Kinomura, Yuji Horino
• p367 Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVD   [ 219 K ]
  Authors: Kanji Yasui, Masahiro Hashiba, Yuzuru Narita, Tadashi Akahane
• p371 Fabrication of α-SiC Heteroepitaxial Films by YAG-PLAD Method   [ 186 K ]
  Authors: Hachizo Muto, Takeshi Kusumori
• p375 Low-Temperature Preparation of α-SiC Epitaxial Films by Nd: YAG Pulsed-Laser Deposition   [ 215 K ]
  Authors: Takeshi Kusumori, Hachizo Muto