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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

• Papers
• Abstracts

• p379 Physics of Heteroepitaxy and Heterophases   [ 201 K ]
  Authors: Pierre M. Masri, Jörg Pezoldt, M. Sumiya, M. Averous
• p385 Growth-Induced Structural Defects in SiC PVT Boules   [ 415 K ]
  Authors: Marek Skowronski
• p391 Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography   [ 335 K ]
  Authors: Michael Dudley, William M. Vetter, X. Huang, Philip G. Neudeck, J. Anthony Powell
• p395 Behavior of Micropipes during Growth in 4H-SiC   [ 281 K ]
  Authors: N. Vouroutzis, Rositza Yakimova, Mikael Syväjärvi, Henrik Jacobsson, J. Stoemenos, Erik Janzén
• p399 Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals   [ 396 K ]
  Authors: S.E. Saddow, Troy Elkington, M.C.D. Smith
• p403 Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method   [ 231 K ]
  Authors: Makato Sasaki, Youichi Miyanagi, Koji Nakayama, Hiromu Shiomi, Shigehiro Nishino
• p407 Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8   [ 339 K ]
  Authors: Makato Sasaki, Akira Hirai, Toshiyuki Miyanagi, Tomoaki Furusho, Taro Nishiguchi, Hiromu Shiomi, Shigehiro Nishino
• p411 Observation of 2in SiC Wafer by SWBXT at SPring-8   [ 291 K ]
  Authors: Makato Sasaki, Akira Hirai, Toshiyuki Miyanagi, Tomoaki Furusho, Taro Nishiguchi, Hiromu Shiomi, Shigehiro Nishino
• p415 Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC   [ 252 K ]
  Authors: Jin Qiang Liu, Edward M. Sanchez, Marek Skowronski
• p419 Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography   [ 458 K ]
  Authors: Etienne Pernot, E. Neyret, Cécile Moulin, Petra Pernot-Rejmánková, Francois Templier, Lea Di Cioccio, Thierry Billon, Roland Madar