Silicon Carbide and Related Materials - 2002
Materials Science Forum Volumes 433 - 436
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p51
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
[
128 K
]
Authors: Matthias Bickermann, Dieter Hofmann, Thomas L. Straubinger, Roland Weingärtner, Albrecht Winnacker -
p55
PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
[
189 K
]
Authors: Michael Rasp, Thomas L. Straubinger, Erwin Schmitt, Matthias Bickermann, Horst Sadowski, Sergey A. Reshanov -
p59
Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC
[
410 K
]
Authors: Yu.M. Suleimanov, S. Lulu, I. Tarasov, Sergei S. Ostapenko, V.D. Heydemann, Matthew D. Roth, Olle Kordina, Mike F. MacMillan, S.E. Saddow -
p63
Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method
[
222 K
]
Authors: Kurt Semmelroth, Frank Schmid, D. Karg, Gerhard Pensl, Manfred Maier, S. Greulich-Weber, Johann Martin Spaeth -
p67
Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
[
578 K
]
Authors: Z.G. Herro, Matthias Bickermann, Boris M. Epelbaum, Pierre M. Masri, Albrecht Winnacker -
p71
Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
[
97 K
]
Authors: H. Tanaka, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino -
p75
Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation
[
93 K
]
Authors: R.R Ciechonski, Rositza Yakimova, Mikael Syväjärvi, Erik Janzén -
p79
Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
[
237 K
]
Authors: Yoshimitsu Yamada, Kazukiyo Sagawa, Shinichi Nakashima -
p83
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
[
536 K
]
Authors: Mikhail Anikin, Michel Pons, Etienne Pernot, Roland Madar -
p87
A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
[
153 K
]
Authors: L. Charpentier, Francis Baillet, Didier Chaussende, Etienne Pernot, Michel Pons, Roland Madar
