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Silicon Carbide and Related Materials - 2002

Materials Science Forum Volumes 433 - 436

• Papers
• Abstracts

• p753 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure   [ 63 K ]
  Authors: Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda
• p757 Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC   [ 16 M ]
  Authors: S. Banerjee, T.P. Chow, Ronald J. Gutmann
• p761 Modelling of Radiation Response of p-Channel SiC MOSFETs   [ 468 K ]
  Authors: Kin Kiong Lee, Takeshi Ohshima, Hisayoshi Itoh
• p765 Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET   [ 94 K ]
  Authors: Ken Ichi Ohtsuka, Yoichiro Tarui, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami, Tatsuo Ozeki
• p769 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications   [ 44 K ]
  Authors: Dethard Peters, Adolf Schöner, Peter Friedrichs, Dietrich Stephani
• p773 Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs   [ 157 K ]
  Authors: Sang-Mo Koo, Martin Domeij, C.M. Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén
• p777 Optimisation of a 4H-SiC Enhancement Mode Power JFET   [ 71 K ]
  Authors: A.B. Horsfall, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill
• p781 Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors   [ 1 M ]
  Authors: W. Liu, Erik Danielsson, C.M. Zetterling, Mikael Östling
• p785 Power Amplification in UHF Band Using SiC RF Power BJTs   [ 499 K ]
  Authors: Anant Agarwal, Craig Capell, Binh Phan, James Milligan, John Palmour, Jerry Stambaugh, Howard Bartlow, Ken Brewer
• p789 Demonstration of Monolithic Darlington Transistors in 4H-SiC   [ 96 K ]
  Authors: Yi Tang, T.P. Chow