Paper Titles
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
p.281
Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
p.285
High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
p.289
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
p.293
Dynamics of 4H-SiC Plasticity
p.297
Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
p.301
Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
p.305
Photoluminescence Up-Conversion Processes in SiC
p.309
New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
p.313

Dynamics of 4H-SiC Plasticity

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Silicon Carbide and Related Materials - 2002 View Preview

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

297-300

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.297

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Online since:

September 2003

Authors:

S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri Makarov

Keywords:

4H-SiC, Dislocation, Loading Test, Plasticity, Yield Stress

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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