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Silicon Carbide and Related Materials - 2002

Materials Science Forum Volumes 433 - 436

• Papers
• Abstracts

• p217 Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-   [ 422 K ]
  Authors: Takeshi Kusumori, Hachizo Muto
• p221 Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor   [ 445 K ]
  Authors: V. De Renzi, R. Biagi, U. Del Pennino
• p225 Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization   [ 260 K ]
  Authors: Hachizo Muto, Takashi Asano, Takeshi Kusumori
• p229 Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates   [ 190 K ]
  Authors: Hideki Shimizu, Kensaku Hisada
• p233 High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates   [ 103 K ]
  Authors: Petia Weih, Volker Cimalla, Christian Förster, Jörg Pezoldt, Thomas Stauden, Lothar Spieß, Henry Romanus, M. Eickhoff, M. Hermann, Pierre M. Masri, Oliver Ambacher
• p237 SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures   [ 161 K ]
  Authors: L. Aversa, R. Verucchi, M. Pedio, S. Iannotta
• p241 Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers   [ 134 K ]
  Authors: K. Murata, Naoki Fujioka, Y. Chinone, Shigehiro Nishino
• p247 Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices   [ 2 M ]
  Authors: Michael Dudley, X. Huang, William M. Vetter, Philip G. Neudeck
• p253 Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing   [ 1 M ]
  Authors: Hun Jae Chung, Jin Qiang Liu, Anne Henry, Marek Skowronski
• p257 Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering   [ 190 K ]
  Authors: J. Serrano, J. Strempfer, M. Cardona, M. Schwoerer-Böhning, H. Requardt, M. Lorenzen, B. Stojetz, P. Pavone, W.J. Choyke