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Silicon Carbide and Related Materials - 2002

Materials Science Forum Volumes 433 - 436

• Papers
• Abstracts

• p261 Conditions for Micropipe Dissociation by 4H-SiC CVD Growth   [ 220 K ]
  Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi
• p265 Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging   [ 812 K ]
  Authors: Etienne Pernot, I. El Harrouni, Michel Mermoux, Jean Marie Bluet, Mikhail Anikin, Didier Chaussende, Michel Pons, Roland Madar
• p269 Doping-Related Strain in n-Doped 4H-SiC Crystals   [ 1 M ]
  Authors: Henrik Jacobsson, J. Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositza Yakimova, Erik Janzén
• p273 Stacking Faults in 3C-SiC Relax Lattice Deformation   [ 1 M ]
  Authors: Naoki Hatta, Kuniaki Yagi, Takamitsu Kawahara, Hiroyuki Nagasawa
• p277 Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes   [ 1 M ]
  Authors: N. Vouroutzis, Mikael Syväjärvi, J. Stoemenos, Rositza Yakimova
• p281 Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers   [ 2 M ]
  Authors: Rositza Yakimova, Mikael Syväjärvi, T. Iakimov, A.O. Okunev, V.E. Udal'tsov, Erik Janzén
• p285 Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC   [ 1 M ]
  Authors: Francisco M. Morales, S.I. Molina, Daniel Araújo, Volker Cimalla, Jörg Pezoldt
• p289 High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals   [ 73 K ]
  Authors: Christoph Seitz, Al. Rempel, Andreas Magerl, M. Gomm, W. Sprengel, Hans Eckhardt Schaefer
• p293 Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation   [ 1 M ]
  Authors: N.S. Savkina, Anatoly M. Strel'chuk, L.M. Sorokin, G.N. Mosina, A.S. Tregubova, V.V. Solov'ev, A.A. Lebedev
• p297 Dynamics of 4H-SiC Plasticity   [ 94 K ]
  Authors: S.Yu. Karpov, A.V. Kulik, M.S. Ramm, Yuri N. Makarov