Silicon Carbide and Related Materials - 2002
Materials Science Forum Volumes 433 - 436
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p301
Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
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49 K
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Authors: Bjorn Magnusson, J.Peder Bergman, Erik Janzén -
p305
Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
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27 K
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Authors: John W. Steeds, G.A. Evans, S.A. Furkert, Lothar Ley, Martin Hundhausen, Norbert Schulze, Gerhard Pensl -
p309
Photoluminescence Up-Conversion Processes in SiC
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150 K
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Authors: Matthias Wagner, I.G. Ivanov, L. Storasta, Bjorn Magnusson, J.Peder Bergman, W.M. Chen, Erik Janzén -
p313
New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
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220 K
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Authors: Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt -
p317
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
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313 K
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Authors: Simona Binetti, Alessia Le Donne, Maurizio Acciarri, M. Cerminara, Sergio Pizzini -
p321
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
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93 K
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Authors: I.G. Ivanov, Alexsandre Ellison, Erik Janzén -
p325
Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
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220 K
]
Authors: Roland Püsche, Martin Hundhausen, Lothar Ley -
p329
Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
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491 K
]
Authors: O.P. Alexander Lindquist, H. Arwin, Anne Henry, K. Järrendahl -
p333
Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
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57 K
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Authors: Roland Weingärtner, Matthias Bickermann, Z.G. Herro, Ulrike Künecke, Sakwe Aloysius Sakwe, Peter J. Wellmann, Albrecht Winnacker -
p337
Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
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198 K
]
Authors: Matthias Bickermann, Roland Weingärtner, Z.G. Herro, Dieter Hofmann, Ulrike Künecke, Peter J. Wellmann, Albrecht Winnacker
