Silicon Carbide and Related Materials - 2002
Materials Science Forum Volumes 433 - 436
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p341
Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
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59 K
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Authors: Roland Weingärtner, Albrecht Winnacker, Peter J. Wellmann -
p345
Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
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45 K
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Authors: F.H.C. Carlsson, S.G. Sridhara, Anders Hallén, J.Peder Bergman, Erik Janzén -
p349
Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping
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338 K
]
Authors: L. Masarotto, Jean Marie Bluet, I. El Harrouni, Gérard Guillot -
p353
Raman Imaging Analysis of SiC Wafers
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234 K
]
Authors: Michel Mermoux, Alexandre Crisci, Francis Baillet -
p357
Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers
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723 K
]
Authors: M. Mier, John Boeckl, Matthew D. Roth, Cengiz M. Balkas, M. Nelson -
p361
Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
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225 K
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Authors: Xian Yun Ma, Mathew Parker, Yuefei Ma, T. Kubota, Tangali S. Sudarshan -
p365
Electrical and Optical Characterization of SiC
[
166 K
]
Authors: Gerhard Pensl, Frank Schmid, Florin Ciobanu, Michael Laube, Sergey A. Reshanov, Norbert Schulze, Kurt Semmelroth, Adolf Schöner, Günter Wagner, Hiroyuki Nagasawa -
p371
Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
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88 K
]
Authors: Marie-Laure David, Giovanni Alfieri, Edouard V. Monakhov, Anders Hallén, Jean François Barbot, B.G. Svensson -
p375
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
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314 K
]
Authors: Vito Raineri, Lucia Calcagno, Filippo Giannazzo, D. Goghero, F. Musumeci, Fabrizio Roccaforte, Francesco La Via -
p379
Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
[
95 K
]
Authors: Sergey A. Reshanov, O. Klettke, Gerhard Pensl
