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Silicon Carbide and Related Materials - 2002

Materials Science Forum Volumes 433 - 436

• Papers
• Abstracts

• p383 On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC   [ 133 K ]
  Authors: E. van Wyk, A.W.R. Leitch
• p387 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers   [ 244 K ]
  Authors: Adolf Schöner, Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami
• p391 Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes   [ 50 K ]
  Authors: Enn Velmre, Andres Udal
• p395 Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization   [ 55 K ]
  Authors: V. Heera, K.N. Madhusoodanan, A. Mücklich, D. Panknin, Wolfgang Skorupa
• p399 Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping   [ 212 K ]
  Authors: P. Terziyska, Julien Pernot, Sylvie Contreras, Jean-Louis Robert, Lea Di Cioccio, Thierry Billon
• p403 From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks   [ 1 M ]
  Authors: Julien Pernot, Jean Camassel, Hervé Peyre, Jean-Louis Robert
• p407 Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation   [ 64 K ]
  Authors: V. Bikbajevas, Vytautas Grivickas, M. Stölzer, Enn Velmre, Andres Udal, Paulius Grivickas, Mikael Syväjärvi, Rositza Yakimova
• p411 Parameters of Electron-Hole Scattering in Silicon Carbide   [ 74 K ]
  Authors: Michael E. Levinshtein, Pavel A. Ivanov, A.G. Tandoev, S.N. Yurkov, John Palmour, Ranbir Singh
• p415 Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy   [ 104 K ]
  Authors: P. Lévêque, D.M. Martin, B.G. Svensson, Anders Hallén
• p419 Electrical Characterization of Ni/Porous SiC/n-SiC Structure   [ 1 M ]
  Authors: A.E. Grekov, Stanislav Soloviev, Taniya Das, Tangali S. Sudarshan