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Silicon Carbide and Related Materials 2003

Materials Science Forum Volumes 457 - 460

• Papers
• Abstracts

• p59 Thermodynamic Analysis of the Production of Silicon Carbide via Silicon Dioxide and Carbon   [ 91 K ]
  Authors: V.G. Sevastyanov, Yu S. Ezhov, E.P. Simonenko, N.T. Kuznetsov
• p63 Faceted Growth of SiC Bulk Crystals   [ 349 K ]
  Authors: I.D. Matukov, D.S. Kalinin, M.V. Bogdanov, S.Yu. Karpov, D.Kh. Ofengeim, M.S. Ramm, J.S. Barash, E.N. Mokhov, A.D. Roenkov, Yu.A. Vodakov, M.G. Ramm, H. Helava, Yuri N. Makarov
• p67 Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth   [ 303 K ]
  Authors: A.V. Kulik, M.V. Bogdanov, S.Yu. Karpov, M.S. Ramm, Yuri N. Makarov
• p71 Free Growth of 4H-SiC by Sublimation Method   [ 435 K ]
  Authors: Jean-Marc Dedulle, Mikhail Anikin, Michel Pons, Elisabeth Blanquet, Alexander Pisch, Roland Madar, Claude Bernard
• p75 Advanced PVT Growth of 2 & 3-Inch Diameter 6H SiC Crystals   [ 1009 K ]
  Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback
• p79 Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality   [ 274 K ]
  Authors: Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani, Hirokatsu Yashiro, Masashi Nakabayashi
• p83 Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal   [ 122 K ]
  Authors: Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Hirokatsu Yashiro
• p87 Growth of Bulk SiC by Halide Chemical Vapor Deposition   [ 115 K ]
  Authors: M. Fanton, Marek Skowronski, David W. Snyder, Hun Jae Chung, Saurav Nigam, B. Weiland, Sung Wook Huh
• p91 Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method   [ 267 K ]
  Authors: Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, Sandrine Juillaguet, Michel Mermoux, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar
• p95 Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC   [ 257 K ]
  Authors: Z.G. Herro, Boris M. Epelbaum, Matthias Bickermann, Pierre M. Masri, Albrecht Winnacker